This 11th session of MIGAS is devoted to: "Nanoscale CMOS and Si-based Beyond CMOS Nanodevices"

This school is addressed to PhD students, engineers and researchers coming both from the university and from industry of the semiconductors.

Program:
1) Advanced materials, technology and characterization methods for nanoscale CMOS
- Strained SOI materials for high performance MOSFETs, C. Mazur�©, SOITEC
- Advanced strain platforms, E. Parker, Warwick University
- High k dielectrics and metal gates, O. Engstrom, Chalmers University
- Schottky source-drain contacts, E. Dubois, IEMN
- Emerging nanotechnologies, T. Baron, LTM
- New characterization methods for nanoMOSFETs, G. Ghibaudo, IMEP-LAHC

2) Novel CMOS architectures
- Multi-gate and multi-channel MOSFETs, T. Ernst , Leti
- Silicon-On-Nothing nanodevices, T. Skotnicki, STMicroelectronics
- Ge channel MOSFETs, G. Eneman, IMEC
- III-V channel MOS transistors, A. Dimoulas, Demokritos

3) Beyond-CMOS Nanodevices
- Small slope Switches, A. Ionescu, EPFL
- Nanowires, J.P. Raskin, UCL
- Carbon electronics, J. Xu, Brown University

4) Innovative Memories
- Non-volatile memories, L. Baldi, STMicroelectronics
- Advanced DRAM, M. Golbach, Qimonda
- Emerging memories, H.-S. Ph. Wong, Stanford University

Location: Grenoble / Autrans, France
Contact: Laurent.Montes@minatec.inpg.fr