New Process: SiXtron has developed a highly innovative process for depositing, in an extremely cost effective manner and on various substrates, thin films of material in the silicon carbide (SiC) family which exhibit semi-conducting and semi-insulating properties. SiXtron’s deposition produces SiC thin films with the following advantages compared to existing methods: 1) inexpensive raw inputs, 2) a lower deposition temperature than other chemical vapour deposition (CVD) processes, 3) eliminates the need to use toxic gases, 4) a rapid deposition rate, and 5) the ability to add oxygen, nitrogen and other elements.

Better Solutions: SiXtron can produce amorphous SiC (a-SiC) tailored to meet customer specifications. The mechanical and electrical properties of SiXtron’s films makes them the candidate of choice for numerous applications in high performance electronic devices, optoelectronic devices, as well as in many harsh environment coating applications (e.g. sensors, MEMS, etc.)