NanoMaker provides a unique set of possibilities for nanotechnologies
* It is supplied with friendly graphic editor to design hierarchical structures of any size and shape arranged to any level of complexity.
* Makes simulation of resist development.
* Calculates exposure dose values/times considering proximity effect correction for 2D/3D structures.
* Compensates static distortion of e-beam deflecting system.
* Significantly reduces total exposure time by actively suppressing dynamic delays of e-beam deflection.
* Can be used as diagnostic tool for creation of high-resolution panoramic view of large-scale (centimeters) micro objects.
Purposes:
1. To convert any scanning electron microscope (SEM) into an e-beam lithograph.
2. To provide an ultimate resolution of lithography with a certain setup (including industrial lithographs). To achieve this:
_a. make correction for proximity effect during data preparation for lithography
_b. compensate for the distortion and delays of scanning system during exposure and image acquisition
_c. compensate for the system drift at prolonged exposure

3. To predict results of lithography by simulating.
4. To ensure adjustment for various configurations of lithographic equipment, for the presence or absence of beam blanking systems, stages, etc.
5. To create three-dimensional structures in a resist.
6. To familiarize user with the basic principles of lithography.