France: PhD position on antimony-based III-V heterostructures

PhD position on antimony-based III-V heterostructures for tunnel FET tranistors : Villeneuve d’Ascq, France

Recently a new quantum mechanical device called Tunnel Field Effect Transistor (TFET) has gained more and more interest as the classical CMOS FET technology faces some physical limits into the nanoscale. Different materials have been proposed to realize this kind of devices, in particular Silicon based technologies or III-V homojunctions. Antimony based III-V heterostructures offer a large choice of band offsets and highly staggered band alignment systems which could improve the tunnel transfer efficiency of the device in the ON state. We propose to investigate the potentiality of these materials for the realization of innovative vertical TFET structures working at very low supply voltage. In the framework of the PhD thesis funded by the French National Research Agency, molecular beam epitaxy and nanofabrication techniques will be used for the development of the devices.

Description

IEMN is a research institute created by the National Centre for Scientific Research (CNRS), two universities and an Engineer school of France northern region. IEMN equipment for design, fabrication and characterization of devices are at the best European level. The institute has a total staff of about 500 persons including 109 professors and associate professors, 45 CNRS researchers, 100 engineers and administrative agents, about 150 PhD students as well as 30 post doc and invited professors and 60 master students and trainees. The IEMN scientific activity covers a large domain going from the physics of materials and nanostructures to microwaves, telecommunications and acoustics instrumentation. Very open to international collaborations, more than 100 foreigner scientists coming from 20 different countries are currently working at IEMN. Open position: PhD grant on antimony-based III-V heterostructures for tunnel FET transistors. Recently a new quantum mechanical device called Tunnel Field Effect Transistor (TFET) has gained more and more interest as the classical CMOS FET technology faces some physical limits into the nanoscale. Different materials have been proposed to realize this kind of devices, in particular Silicon based technologies or III-V homojunctions. Antimony based III-V heterostructures offer a large choice of band offsets and highly staggered band alignment systems which could improve the tunnel transfer efficiency of the device in the ON state. We propose to investigate the potentiality of these materials for the realization of innovative vertical TFET structures working at very low supply voltage. In the framework of the PhD thesis funded by the French National Research Agency, molecular beam epitaxy and nanofabrication techniques will be used for the development of the devices.

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